PHOTOTRANSISTOR CHIP FT060
Category:90V Series
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PHOTOTRANSISTOR CHIP
FT060
GENERAL DESCRIPTION
The FT060 chip is fabricated using Silicon Bipolar
process technology. This chip is designed to be
used in optocouplers.
FEATURES
• Low Saturation 0.2 V
• High Breakdown Voltage 90 V
• Chip Size – 1 x 1 mm
• Chip Thickness – 0.36 mm±0.02mm
• Top Contact Metal – Aluminum
• Bottom Contact Metal (collector)- CrNi
ABSOLUTE MAXIMUM RATINGS
CHIP TOPOGRAPHY
Operating Junction
Temperature
-45°C to 85°C
Collector-Emitter voltage 90 V
Output current 20 mA
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Symbol Characteristic Min Typ Max unit
BVceol Breakdown voltage collector-emitter 60 - - V Ice=1 mA
BVceol Breakdown voltage collector-emitter 90 - - V Ice=50 A
BVeb Breakdown voltage emitter-base 6.5 - - V Ieb=50 A
BVeb Breakdown voltage emitter-collector 7.0 - - V Iec=50 A
Ice0 Collector-emitter dark current - - 100 nA Vce=20 V
Vcesat Collector-emitter saturation voltage - 0.2 0.3 V Ic=10 mA, *
h fe Current transfer ratio 300 - 1300 - Vce=10V, Ib=35 A
* IR irradience of chip E = 20 mW/cm 2 . Peak wavelength λ = 850±20 nm.
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