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You are here:Home >> Products >> Chips芯片 >> Phototransistor chip... >> 90V Series

90V Series

PHOTOTRANSISTOR CHIP FT060

Category:90V Series
Click:30
PHOTOTRANSISTOR CHIP
FT060
GENERAL DESCRIPTION
The FT060 chip is fabricated using Silicon Bipolar
process technology. This chip is designed to be
used in optocouplers.
FEATURES
•  Low Saturation 0.2 V
•  High Breakdown Voltage 90 V
•  Chip Size – 1 x 1 mm
•  Chip Thickness – 0.36 mm±0.02mm
•  Top Contact Metal – Aluminum
•  Bottom Contact Metal (collector)- CrNi
ABSOLUTE MAXIMUM RATINGS
CHIP TOPOGRAPHY
Operating Junction
Temperature
-45°C to 85°C
Collector-Emitter voltage  90 V
Output current  20 mA
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Symbol  Characteristic  Min  Typ  Max  unit
BVceol  Breakdown voltage collector-emitter  60  -  -  V  Ice=1 mA
BVceol  Breakdown voltage collector-emitter  90  -  -  V  Ice=50 A
BVeb  Breakdown voltage emitter-base  6.5  -  -  V  Ieb=50 A
BVeb  Breakdown voltage emitter-collector  7.0  -  -  V  Iec=50 A
Ice0  Collector-emitter dark current  -  -  100  nA  Vce=20 V
Vcesat  Collector-emitter saturation voltage  -  0.2  0.3  V  Ic=10 mA, *
h fe  Current transfer ratio  300  -  1300 -  Vce=10V, Ib=35 A
* IR irradience of chip E = 20 mW/cm 2 . Peak wavelength λ = 850±20 nm.
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