GaAs rectifier pin-diode chip ADV 118AN5
产品类别:ADV 118AN5
点击数:85
GaAs rectifier pin-diode chip
ADV 118AN5.
Ultra-fast switching
High radiation resistance
High-temperature diode structures
Electrical charasteristics
Design
Parameter
Sym
bol
Unit
Value
Test conditions Remark
Min. Typ. Max.
Forward
voltage
drop
V F
V
- 1,4 1,5
I F =1А at T=+25
˚C(normal cond.)
2
- 1,6 1,7 I F =1А at T=-60 ˚С
Reverse
leakage
current
I R
uA
- - 10
V R =700 V at T=+25
˚C(normal cond.)
1
- - 100
V R =700 V at T=+125
˚C
2
Breakdown
voltage
V R
V
700 900 - I R =100µA 1
Reverse
recovery
time
t rr ns - 30 35
dI/dt=100А/ms, V R =30
V I F =1А
2
Remark:
1-controlled parameter of chip diode (packageless);
2 - controlled parameter of inbuilt to the package diode
Chip’s size, mm
1,4
±0,03
х 1,4
±0,03
Chip thickness (H), µm
380
±15
Size of anode part, mm
1,4
±0,03
х 1,4
±0,03
Size of cathode part, mm
0,9
-0,01
х 0,9
-0,01
Anode metallization Au
Cathode metallization Au
Glassification junction polyimide
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